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The best of both worlds: Integrating novel carbon nanotubes with mature silicon transistor technology.

Researchers at the Center for Nanoscale Systems have demonstrated for the first time the hybrid integration of silicon and carbon nanotube transistors by making an inverter, a device used for converting direct current (DC) to alternating current (AC). The single-walled carbon nanotube (CNT) forms a p-type field effect transistor, with a relatively low abundance of electrons. The CNT has been integrated on top of an individual n-type CMOS transistor, a device structure that has a relatively high abundance of electrons. For dense integration of these two opposite-polarity devices, a polysilicon gate is positioned between the silicon device channel and carbon nanotube. Such a configuration offers many advantages for high-density electronics as well as for ultra-sensitive detection. The inverter has a low operation voltage and provides high gain in switching.

Schematic diagram of the integration of a carbon nanotube (yellow) field effect transistor with a silicon (black) CMOS transistor and a shared polycrystalline silicon gate (pink).

[Lead CNS Investigator: Tiwari group - Nanoelectronics Thrust, Center for Nanoscale Systems, Cornell University]

For additional information see:

  • H. Lin, Y.W. Park and S. Tiwari, “A Compact Single Wall Carbon Nanotube Transistor Integrated with Silicon MOSFET Using a Single Common Gate,” MRS Proceedings, Paper No. 0963-Q14-04, (2006)
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